| Work Size: |
ψ50mm ~ 150mm wafer or Max. □150mm x 150 mm substrate |
| Mask Size: | □4" ~ □7" Quartz or Soda Lime |
| Lamp House Watt: | 250W |
| Wavelength Range: |
Broad Band ( i line : 365nm / h line : 400nm / g line : 436 nm ) |
| Light Intensity: |
> 16 mW / cm2 based on 365 nm (250W) > 40 mW / cm2 based on 365 nm (500W) |
| Lamp Source: | High Mercury Lamp |
| Light Intensity Uniformity: | < 3% based on Dia. 4" wafer |
| Effective Exposure Area: | Max. □150 mm x 150 mm |
| Compensation Leveling System Driven: | By Auto |
| Contact Driven: | By Auto |
| Exposure Mode: |
Proximity / Soft Contact / Hard Contact / Vacuum Contact |
| Alignment System: | By CCD driven by manual method |
| Alignment Accuracy: |
±1μm for top side alignment ±3μm for bottom side alignment |
| L/S Resolution: | 1μm based on contact mode and PR thickness 1μm |
| Anti-vibration Table: | Yes |
| System Control: | PC Base |
| Option: |
Cut Filter 500W Lamp House DUV Lamp House 積算光量功能 Power Meter |
| ELS Model No. : | ELS106SA-B |
| Work Size: |
ψ50mm ~ 150mm wafer or Max. □150mm x 150 mm substrate |
| Mask Size: | □4" ~ □7" Quartz or Soda Lime |
| Lamp House Watt: | 250W |
| Wavelength Range: |
Broad Band ( i line : 365nm / h line : 400nm / g line : 436 nm ) |
| Light Intensity: |
> 16 mW / cm2 based on 365 nm (250W) > 40 mW / cm2 based on 365 nm (500W) |
| Lamp Source: | High Mercury Lamp |
| Light Intensity Uniformity: | < 3% based on Dia. 4" wafer |
| Effective Exposure Area: | Max. □150 mm x 150 mm |
| Compensation Leveling System Driven: | By Auto |
| Contact Driven: | By Auto |
| Exposure Mode: |
Proximity / Soft Contact / Hard Contact / Vacuum Contact |
| Alignment System: | By CCD driven by manual method |
| Alignment Accuracy: | ±1μm |
| L/S Resolution: | 1μm based on contact mode and PR thickness 1μm |
| Anti-vibration Table: | Yes |
| System Control: | PC Base |
| Option: |
Cut Filter 500W Lamp House DUV Lamp House Chuck for Broken wafer 積算光量功能 Power Meter |
| ELS Model No. : | ELS106SA |