Work Size: |
ψ50mm~150mm wafer or Max. □150mm x 150 mm substrate |
Mask Size: | □4" ~ □7" Quartz or Soda Lime |
Lamp House Watt: | 250W |
Wavelength Range: |
Broad Band ( i line : 365nm / h line : 400nm / g line : 436 nm ) |
Light Intensity: |
> 16 mW / cm2 based on 365 nm (250W) > 40 mW / cm2 based on 365 nm (500W) |
Lamp Source: | High Mercury Lamp |
Light Intensity Uniformity: | < 3% based on Dia. 4" wafer |
Effective Exposure Area: | Max. □150 mm x 150 mm |
Compensation Leveling System Driven: | By Auto |
Contact Driven: | By Auto |
Exposure Mode: |
Proximity / Soft Contact / Hard Contact / Vacuum Contact |
Alignment System: | By CCD driven by manual method |
Alignment Accuracy: |
±1μm for top side alignment ±3μm for bottom side alignment |
L/S Resolution: | 1μm based on contact mode and PR thickness 1μm |
Anti-vibration Table: | Yes |
System Control: | PC Base |
Option: |
Cut Filter 500W Lamp House DUV Lamp House 積算光量功能 Power Meter |
ELS Model No. : | ELS106SA-B |
Work Size: |
ψ50mm~150mm wafer or Max. □150mm x 150 mm substrate |
Mask Size: | □4" ~ □7" Quartz or Soda Lime |
Lamp House Watt: | 250W |
Wavelength Range: |
Broad Band ( i line : 365nm / h line : 400nm / g line : 436 nm ) |
Light Intensity: |
> 16 mW / cm2 based on 365 nm (250W) > 40 mW / cm2 based on 365 nm (500W) |
Lamp Source: | High Mercury Lamp |
Light Intensity Uniformity: | < 3% based on Dia. 4" wafer |
Effective Exposure Area: | Max. □150 mm x 150 mm |
Compensation Leveling System Driven: | By Auto |
Contact Driven: | By Auto |
Exposure Mode: |
Proximity / Soft Contact / Hard Contact / Vacuum Contact |
Alignment System: | By CCD driven by manual method |
Alignment Accuracy: | ±1μm |
L/S Resolution: | 1μm based on contact mode and PR thickness 1μm |
Anti-vibration Table: | Yes |
System Control: | PC Base |
Option: |
Cut Filter 500W Lamp House DUV Lamp House Chuck for Broken wafer 積算光量功能 Power Meter |
ELS Model No. : | ELS106SA |